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article · 2025

400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

• the world’s first 400 V SiC MOSFET technology and its properties and benefits are introduced • the new 400 V devices are perfect matches for use in three-l...

1 citationsDOI: https://doi.org/10.1016/j.pedc.2025.100104Open access
400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI