High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

We demonstrate high-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with Mo anode and low turn-on voltage of 0.31 V. AlGaN/GaN SBDs with anode t...