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article · 2015

ELECTRONIC TRANSITIONS OF JET-COOLED SiC2, Si2Cn(n=1−3), Si3Cn(n= 1,2), AND SiC6H4BETWEEN 250 AND 710 nm

Electronic transitions of the title molecules were measured between 250 and 710 nm using a mass-resolved 1+1' resonant two-photon ionization technique at a r...

21 citationsDOI: https://doi.org/10.1088/0004-637x/801/2/119Open accessPDF reported by metadata
ELECTRONIC TRANSITIONS OF JET-COOLED SiC2, Si2Cn(n=1−3), Si3Cn(n= 1,2), AND SiC6H4BETWEEN 250 AND 710 nm