article · 2009
30V High-side N-channel Lateral Trench MOSFET
A High-side Lateral Trench MOSFET (LTDMOS) was fabricated in a 0.35µm ModularBCD™ technology. The drift region of this device completely surrounds and isolat...
1 citationsDOI: https://doi.org/10.1109/ispsd.2009.5158068