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article · 2002

Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process

The conventional mesa isolation process in AlGaAs/InGaAs doped-channel FETs (DCFETs) results in the gate contacting the exposed highly n-type doped channel a...

1 citationsDOI: https://doi.org/10.1109/rfic.2001.935662
Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process