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article · 2006

Effect of GaN buffer layers on the polarity and properties of ZnO epilayers on nitrided c‐Al2O3 by MBE

Abstract ZnO epilayers were grown on nitrided c‐Al 2 O 3 substrates by MBE and the effect of the deposition temperature for GaN buffer layers on the polarity...

2 citationsDOI: https://doi.org/10.1002/pssc.200564703
Effect of GaN buffer layers on the polarity and properties of ZnO epilayers on nitrided c‐Al2O3 by MBE