article · 2010
A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device
An 8-layer, 75 nm half-pitch, 3D stacked vertical-gate (VG) TFT BE-SONOS NAND Flash array is fabricated and characterized. We propose a buried-channel (n-typ...
105 citationsDOI: https://doi.org/10.1109/vlsit.2010.5556199