article · 1991
High-efficiency InGaP light-emitting diodes on GaP substrates
Very high brightness In(x)Ga(1−x)P light-emitting diodes (LEDs) have been fabricated on GaP substrates by hydride vapor phase epitaxy. LEDs operating at wave...
35 citationsDOI: https://doi.org/10.1063/1.105024