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article · 1991

High-efficiency InGaP light-emitting diodes on GaP substrates

Very high brightness In(x)Ga(1−x)P light-emitting diodes (LEDs) have been fabricated on GaP substrates by hydride vapor phase epitaxy. LEDs operating at wave...

35 citationsDOI: https://doi.org/10.1063/1.105024
High-efficiency InGaP light-emitting diodes on GaP substrates