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article · 2013

Investigation of ion beam mixing threshold value in Mn/Si system using swift heavy ions

Abstract A metal/semiconductor system (a-Si/Mn/a-Si) was deposited on the silicon substrate using the electron beam evaporation method. These samples were ir...

1 citationsDOI: https://doi.org/10.1080/10420150.2013.798322
Investigation of ion beam mixing threshold value in Mn/Si system using swift heavy ions