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article · 2014

Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

We investigated the effect of ion-beam irradiation of the 3 C -SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3 C...

3 citationsDOI: https://doi.org/10.4028/www.scientific.net/msf.778-780.1170
Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates