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article · 2012

Response Spectrum 0.9-2.65 μm of In<sub>0.82</sub>Ga<sub>0.18</sub>As Detectors by Two-Step Growth Technique

InP/In 0.82 Ga 0.18 As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low tempe...

0 citationsDOI: https://doi.org/10.4028/www.scientific.net/amr.629.209
Response Spectrum 0.9-2.65 μm of In<sub>0.82</sub>Ga<sub>0.18</sub>As Detectors by Two-Step Growth Technique