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article · 2012

Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence

Defect formation and annihilation in ultra-shallow junctions (USJs) before and after rapid thermal annealing are characterized by multiwavelength-excited pho...

0 citationsDOI: https://doi.org/10.1063/1.4766514Open accessPDF reported by metadata
Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence