article · 2012
Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence
Defect formation and annihilation in ultra-shallow junctions (USJs) before and after rapid thermal annealing are characterized by multiwavelength-excited pho...
0 citationsDOI: https://doi.org/10.1063/1.4766514Open accessPDF reported by metadata