article · 1990
Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser deposition
A new epitaxial oxide, PrO2, has been grown on Si (111) by pulsed laser deposition. X-ray diffraction shows that films are oriented with the PrO2[111] direct...
51 citationsDOI: https://doi.org/10.1063/1.346228