Quantitative evaluation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow></mml:math>interfaces using high-resolution high-angle annular dark field scanning transmission electron microscopy

Direct atomic-resolution observations of a $\mathrm{Si}{\mathrm{O}}_{2}∕\mathrm{Si}(001)$ interface formed by hydrochloric acid oxidation, where the interfac...