article · 1996
Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3(Gd2O3), al...
165 citationsDOI: https://doi.org/10.1116/1.588924