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article · 1996

Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3(Gd2O3), al...

165 citationsDOI: https://doi.org/10.1116/1.588924
Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy