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article · 2002

A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors

A unified approach is presented and experimentally validated for the modeling of hot-carrier degradation of the DC current gain and 1/f noise of bipolar tran...

3 citationsDOI: https://doi.org/10.1109/bipol.1997.647406
A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors