article · 2015
Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors
Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared dete...
7 citationsDOI: https://doi.org/10.1063/1.4932208Open accessPDF reported by metadataFull text reported by metadata