article · 2002
Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy
We report successful growth of low threshold current GaAs/InGaAs vertical cavity surface emitting lasers (VCSELs) by molecular beam epitaxy (MBE) at a consta...
0 citationsDOI: https://doi.org/10.1109/smelec.1996.616475