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article · 2013

Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures

In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al...

0 citationsDOI: https://doi.org/10.5277/oa130103Open access
Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures