article · 2013
Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al...
0 citationsDOI: https://doi.org/10.5277/oa130103Open access