{"associated_institutions":[{"country_code":"CN","display_name":"Fudan University","id":"https://openalex.org/I24943067","relationship":"parent","ror":"https://ror.org/013q1eq08","type":"education"}],"authors_api_url":"https://scholar.citedevidence.com/v1/oa/institutions/I4391767673/authors","cited_by_count":237336,"collaborators_api_url":"https://scholar.citedevidence.com/v1/oa/institutions/I4391767673/collaborators","country_code":null,"counts_by_year":[{"cited_by_count":1,"oa_works_count":1,"works_count":8,"year":2026},{"cited_by_count":278,"oa_works_count":22,"works_count":95,"year":2025},{"cited_by_count":1441,"oa_works_count":44,"works_count":146,"year":2024},{"cited_by_count":2747,"oa_works_count":59,"works_count":197,"year":2023},{"cited_by_count":5660,"oa_works_count":45,"works_count":305,"year":2022},{"cited_by_count":8489,"oa_works_count":56,"works_count":234,"year":2021},{"cited_by_count":8770,"oa_works_count":67,"works_count":204,"year":2020},{"cited_by_count":5455,"oa_works_count":47,"works_count":178,"year":2019},{"cited_by_count":5872,"oa_works_count":37,"works_count":146,"year":2018},{"cited_by_count":3333,"oa_works_count":27,"works_count":95,"year":2017},{"cited_by_count":2517,"oa_works_count":18,"works_count":64,"year":2016},{"cited_by_count":2785,"oa_works_count":14,"works_count":69,"year":2015},{"cited_by_count":2702,"oa_works_count":14,"works_count":70,"year":2014},{"cited_by_count":2169,"oa_works_count":16,"works_count":108,"year":2013},{"cited_by_count":1385,"oa_works_count":8,"works_count":98,"year":2012},{"cited_by_count":1310,"oa_works_count":8,"works_count":95,"year":2011},{"cited_by_count":1038,"oa_works_count":6,"works_count":103,"year":2010}],"counts_by_year_api_url":"https://scholar.citedevidence.com/v1/oa/institutions/I4391767673/counts_by_year","created_date":"2024-02-14T01:14:19.000Z","display_name":"State Key Laboratory of ASIC and System","display_name_acronyms":[],"display_name_alternatives":["State Key Lab of ASIC and System","State Key Laboratory of ASIC and System","专用集成电路与系统国家重点实验室"],"geo":{"city":"Shanghai","country":"China","country_code":null,"geonames_city_id":null,"latitude":31.222219467163086,"longitude":121.45806121826172,"region":null},"homepage_url":"https://asic-skl.fudan.edu.cn","id":"https://openalex.org/I4391767673","ids":{"grid":null,"openalex":"https://openalex.org/I4391767673","ror":"https://ror.org/01mamgv83","wikidata":null,"wikipedia":null},"image_thumbnail_url":null,"image_url":null,"is_super_system":false,"lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"],"repositories":[],"roles":[{"id":"https://openalex.org/I4391767673","role":"institution","works_count":2411}],"ror":"https://ror.org/01mamgv83","status":"active","summary_stats":{"2yr_mean_citedness":6.476774758983348,"h_index":178,"i10_index":4791},"topic_share":[{"display_name":"Ferroelectric and Negative Capacitance Devices","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T12808","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0036644},{"display_name":"2D Materials and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10275","subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"},"value":0.0021775},{"display_name":"Advanced Memory and Neural Computing","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10502","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0016574},{"display_name":"Ga2O3 and related materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T12529","subfield":{"display_name":"Electronic, Optical and Magnetic Materials","id":"https://openalex.org/subfields/2504"},"value":0.001345},{"display_name":"Advancements in Semiconductor Devices and Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10558","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.001189},{"display_name":"MXene and MAX Phase Materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T12046","subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"},"value":0.0010685},{"display_name":"Semiconductor materials and devices","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10472","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0010316},{"display_name":"Copper Interconnects and Reliability","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T11661","subfield":{"display_name":"Electronic, Optical and Magnetic Materials","id":"https://openalex.org/subfields/2504"},"value":0.0009272},{"display_name":"Nanowire Synthesis and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11272","subfield":{"display_name":"Biomedical Engineering","id":"https://openalex.org/subfields/2204"},"value":0.0009035},{"display_name":"Analog and Mixed-Signal Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10323","subfield":{"display_name":"Biomedical Engineering","id":"https://openalex.org/subfields/2204"},"value":0.0008715},{"display_name":"CCD and CMOS Imaging Sensors","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11992","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0008355},{"display_name":"Advancements in PLL and VCO Technologies","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11417","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0007754},{"display_name":"Radio Frequency Integrated Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10187","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0007162},{"display_name":"Advanced Photonic Communication Systems","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10767","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0007159},{"display_name":"VLSI and FPGA Design Techniques","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11522","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.00066},{"display_name":"GaN-based semiconductor devices and materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Physics and Astronomy","id":"https://openalex.org/fields/31"},"id":"https://openalex.org/T10099","subfield":{"display_name":"Condensed Matter Physics","id":"https://openalex.org/subfields/3104"},"value":0.000647},{"display_name":"ZnO doping and properties","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10090","subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"},"value":0.0006438},{"display_name":"Perovskite Materials and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10247","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0006193},{"display_name":"Low-power high-performance VLSI design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10363","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.000571},{"display_name":"Graphene research and applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10083","subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"},"value":0.0005456},{"display_name":"Advanced Power Amplifier Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11248","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0005229},{"display_name":"Integrated Circuits and Semiconductor Failure Analysis","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T14117","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0005088},{"display_name":"VLSI and Analog Circuit Testing","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Computer Science","id":"https://openalex.org/fields/17"},"id":"https://openalex.org/T11032","subfield":{"display_name":"Hardware and Architecture","id":"https://openalex.org/subfields/1708"},"value":0.0004956},{"display_name":"Semiconductor materials and interfaces","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Physics and Astronomy","id":"https://openalex.org/fields/31"},"id":"https://openalex.org/T11853","subfield":{"display_name":"Atomic and Molecular Physics, and Optics","id":"https://openalex.org/subfields/3107"},"value":0.0004952},{"display_name":"Thin-Film Transistor Technologies","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10623","subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"},"value":0.0004904}],"topics":[{"count":463,"display_name":"Semiconductor materials and devices","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10472","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":319,"display_name":"Advanced Memory and Neural Computing","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10502","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":265,"display_name":"2D Materials and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10275","score":1,"subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"}},{"count":261,"display_name":"Advancements in Semiconductor Devices and Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10558","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":247,"display_name":"Ferroelectric and Negative Capacitance Devices","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T12808","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":144,"display_name":"ZnO doping and properties","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10090","score":1,"subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"}},{"count":142,"display_name":"MXene and MAX Phase Materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T12046","score":1,"subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"}},{"count":141,"display_name":"Graphene research and applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T10083","score":1,"subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"}},{"count":128,"display_name":"Ga2O3 and related materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T12529","score":1,"subfield":{"display_name":"Electronic, Optical and Magnetic Materials","id":"https://openalex.org/subfields/2504"}},{"count":114,"display_name":"Perovskite Materials and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10247","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":113,"display_name":"Photonic and Optical Devices","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10299","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":113,"display_name":"Advanced Photonic Communication Systems","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10767","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":110,"display_name":"Optical Network Technologies","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10232","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":105,"display_name":"Advanced Sensor and Energy Harvesting Materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10338","score":1,"subfield":{"display_name":"Biomedical Engineering","id":"https://openalex.org/subfields/2204"}},{"count":104,"display_name":"Analog and Mixed-Signal Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10323","score":1,"subfield":{"display_name":"Biomedical Engineering","id":"https://openalex.org/subfields/2204"}},{"count":103,"display_name":"Nanowire Synthesis and Applications","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11272","score":1,"subfield":{"display_name":"Biomedical Engineering","id":"https://openalex.org/subfields/2204"}},{"count":99,"display_name":"Radio Frequency Integrated Circuit Design","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10187","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":95,"display_name":"GaN-based semiconductor devices and materials","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Physics and Astronomy","id":"https://openalex.org/fields/31"},"id":"https://openalex.org/T10099","score":1,"subfield":{"display_name":"Condensed Matter Physics","id":"https://openalex.org/subfields/3104"}},{"count":89,"display_name":"Integrated Circuits and Semiconductor Failure Analysis","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T14117","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":88,"display_name":"Semiconductor materials and interfaces","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Physics and Astronomy","id":"https://openalex.org/fields/31"},"id":"https://openalex.org/T11853","score":1,"subfield":{"display_name":"Atomic and Molecular Physics, and Optics","id":"https://openalex.org/subfields/3107"}},{"count":77,"display_name":"Copper Interconnects and Reliability","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T11661","score":1,"subfield":{"display_name":"Electronic, Optical and Magnetic Materials","id":"https://openalex.org/subfields/2504"}},{"count":77,"display_name":"CCD and CMOS Imaging Sensors","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T11992","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":72,"display_name":"Thin-Film Transistor Technologies","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10623","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":70,"display_name":"Gas Sensing Nanomaterials and Sensors","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Engineering","id":"https://openalex.org/fields/22"},"id":"https://openalex.org/T10461","score":1,"subfield":{"display_name":"Electrical and Electronic Engineering","id":"https://openalex.org/subfields/2208"}},{"count":67,"display_name":"Electronic and Structural Properties of Oxides","domain":{"display_name":"Physical Sciences","id":"https://openalex.org/domains/3"},"field":{"display_name":"Materials Science","id":"https://openalex.org/fields/25"},"id":"https://openalex.org/T12588","score":1,"subfield":{"display_name":"Materials Chemistry","id":"https://openalex.org/subfields/2505"}}],"type":"facility","type_id":"https://openalex.org/institution-types/facility","updated_date":"2026-03-30T05:59:38.000Z","works_api_url":"https://scholar.citedevidence.com/v1/oa/institutions/I4391767673/works","works_count":2411}